articleTop 1% cited
Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
physica status solidi (b) · 2002 · Vol. 229(3) · pp. r1–r3
V. Yu. Davydov✉(Physico-Technical Institute)A. A. Klochikhin(Physico-Technical Institute)R. P. Seĭsyan(Physico-Technical Institute)V. V. Emtsev(Physico-Technical Institute)С. В. Иванов(Physico-Technical Institute)F. Bechstedt(Friedrich Schiller University Jena)J. Furthm�ller(Friedrich Schiller University Jena)Hisatomo Harima(Kyoto Institute of Technology)А. В. Мудрый(Institute of Solid State Physics and Semiconductors)J. Aderhold(Leibniz University Hannover)O. Semchinova(Leibniz University Hannover)J. Graul(Leibniz University Hannover)
GaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor Quantum Structures and DevicesSt petersburgTechnical universityHexagonal crystal systemLibrary scienceEngineering physicsPhysicsChemistryRussian federationCrystallographySociology
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986
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References
Fundamental energy gap of GaN from photoluminescence excitation spectra
Physical review. B, Solid state · 1974 · 790 citations
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