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Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

physica status solidi (b) · 2002 · Vol. 229(3) · pp. r1–r3
V. Yu. DavydovA. A. KlochikhinR. P. SeĭsyanV. V. EmtsevС. В. ИвановF. BechstedtJ. Furthm�llerHisatomo HarimaА. В. МудрыйJ. AderholdO. SemchinovaJ. Graul
GaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor Quantum Structures and DevicesSt petersburgTechnical universityHexagonal crystal systemLibrary scienceEngineering physicsPhysicsChemistryRussian federationCrystallographySociology
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References
Fundamental energy gap of GaN from photoluminescence excitation spectra
Physical review. B, Solid state · 1974 · 790 citations
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