Physical Sciences → Physics and Astronomy → Condensed Matter Physics
GaN-based semiconductor devices and materials
This cluster of papers focuses on the first-principles calculations, properties, and applications of III-nitride semiconductors, particularly Gallium Nitride (GaN) and its alloys. It covers topics such as defects and impurities, band parameters, high-power light-emitting diodes (LEDs), AlGaN/GaN HEMTs, nanowires, UV LEDs, and their applications in solid-state lighting.
128K works worldwide1.8M citations
III-NitridesSemiconductorsLight-Emitting DiodesGaNAlGaN/GaN HEMTsDefects and ImpuritiesSolid-State LightingNanowiresUV LEDsBand Parameters
Journals publishing in this area
10
IEEE Transactions on Microwave Theory and Techniques
280h-index
2.91Impact
26.4KArticles
857.7KCitations
12

International Journal of Research in Circuits Devices and Systems
ISSN 2708-45312 articles in this topic
1h-index
0.07Impact
61Articles
4Citations
13

International Journal of Research in Advanced Electronics Engineering
ISSN 2708-45581 articles in this topic
1h-index
0.16Impact
48Articles
7Citations


