articleTop 10% cited
The role of threading dislocations in the physical properties of GaN and its alloys
Physica B Condensed Matter · 1999 · Vol. 273-274 · pp. 24–32
James S. Speck✉(University of California, Santa Barbara)S.J. Rosner(Hewlett-Packard (United States))
GaN-based semiconductor devices and materialsMetal and Thin Film MechanicsSemiconductor Quantum Structures and DevicesMaterials scienceDislocationSemiconductorNitrideDiffusionDopingCondensed matter physicsThreading (protein sequence)OptoelectronicsBand gap
Citations
198
FWCI
3.97
field-weighted impact
References
35
Percentile
94%
vs. same field & year
Citations per year
References
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
Journal of Crystal Growth · 1989 · 687 citations
Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
Japanese Journal of Applied Physics · 1998 · 466 citations
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
Applied Physics Letters · 1994 · 3,754 citations
Thermal Annealing Effects on P-Type Mg-Doped GaN Films
Japanese Journal of Applied Physics · 1992 · 1,113 citations
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