articleTop 10% cited
Extraction of Schottky diode parameters from forward current-voltage characteristics
Applied Physics Letters · 1986 · Vol. 49(2) · pp. 85–87
S. K. Cheung✉(University of California, Berkeley)N.W. Cheung(University of California, Berkeley)
Abstract
It is shown that by using the forward current density-voltage (J-V) characteristics of a Schottky diode, a plot of d(V)/d(ln J) vs J and a plot of the function H(J) vs J, where H(J)≡V−n(kT/q)ln(J/A**T2), will each give a straight line. The ideality factor n, the barrier height φB, and the series resistance R of the Schottky diode can be determined with one single I-V measurement. This procedure has been used successfully to study thermal annealing effects of W/GaAs Schottky contacts.
Semiconductor materials and interfacesIntegrated Circuits and Semiconductor Failure AnalysisSemiconductor materials and devicesSchottky diodeEquivalent series resistanceDiodeAnnealing (glass)Schottky barrierOptoelectronicsMaterials scienceAnalytical Chemistry (journal)VoltageMetal–semiconductor junction
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Cited by
Schottky barrier and pn-junctionI/V plots ? Small signal evaluation
Applied Physics A · 1988 · 439 citations
References
A modified forward <i>I</i>-<i>V</i> plot for Schottky diodes with high series resistance
Journal of Applied Physics · 1979 · 1,455 citations
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