Integrated Circuits and Semiconductor Failure Analysis

This cluster of papers focuses on advanced techniques and methodologies for failure analysis of integrated circuits. It covers a wide range of topics including photon emission microscopy, laser voltage probing, backside analysis, nanoprobing, fault localization, time-resolved imaging, and electrical characterization. The papers explore innovative approaches to identify and analyze failures in CMOS circuits and other semiconductor devices.

Journals publishing in this area

1

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

ISSN 0168-583X4,042 articles in this topic

179h-index

1.49Impact

42.3KArticles

558KCitations

2

Japanese Journal of Applied Physics

ISSN 0021-49223,539 articles in this topic

236h-index

1.18Impact

88.5KArticles

1.2MCitations

3

IEEE Transactions on Electron Devices

ISSN 0018-93832,640 articles in this topic

274h-index

2.68Impact

32.7KArticles

807.8KCitations

4

IEEE Transactions on Nuclear Science

ISSN 0018-94992,168 articles in this topic

181h-index

1.21Impact

32.9KArticles

475KCitations

5

IEEE Journal of Solid-State Circuits

ISSN 0018-9200503 articles in this topic

301h-index

2.71Impact

16.5KArticles

706.1KCitations