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H

Hiroshi Amano

Nagoya UniversityORCID https://orcid.org/0000-0002-7598-2593

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Impact (2-yr)

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Top Publications

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

Applied Physics Letters19862,166 citationsFirst authorCorresponding

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Japanese Journal of Applied Physics19891,936 citationsFirst authorCorresponding

The emergence and prospects of deep-ultraviolet light-emitting diode technologies

Nature Photonics20191,239 citations

The 2018 GaN power electronics roadmap

Journal of Physics D Applied Physics20181,228 citationsFirst author

Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

Japanese Journal of Applied Physics19971,216 citations

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−AlN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Journal of Crystal Growth1989687 citations

Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

Japanese Journal of Applied Physics1997656 citations

Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

Japanese Journal of Applied Physics2000511 citations

Shortest wavelength semiconductor laser diode

Electronics Letters1996462 citations

Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE

Journal of Crystal Growth1991296 citations

Hiroshi Amano · Scinovex