articleTop 1% cited
Essential physics of carrier transport in nanoscale MOSFETs
IEEE Transactions on Electron Devices · 2002 · Vol. 49(1) · pp. 133–141
Mark Lundstrom✉(Purdue University West Lafayette)Zhibin Ren(Purdue University West Lafayette)
Abstract
The device physics of nanoscale MOSFETs is explored by numerical simulations of a model transistor. The physics of charge control, source velocity saturation due to thermal injection, and scattering in ultrasmall devices are examined. The results show that the essential physics of nanoscale MOSFETs can be understood in terms of a conceptually simple scattering model.
Semiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignNanowire Synthesis and ApplicationsNanoscopic scaleMOSFETScatteringSaturation velocityTransistorPhysicsVelocity saturationField-effect transistorCharge carrierNanoelectronics
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Theory of ballistic nanotransistors
IEEE Transactions on Electron Devices · 2003 · 769 citations
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