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(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

Applied Physics Letters · 1996 · Vol. 69(3) · pp. 363–365

Hiroshi Ohno✉(Tohoku University)Aidong Shen(Tohoku University)F. Matsukura(Tohoku University)A. Oiwa(The University of Tokyo)Akira Endo(The University of Tokyo)Shingo Katsumoto(The University of Tokyo)Y. Iye(The University of Tokyo)

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Abstract

A new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy. The lattice constant of (Ga,Mn)As films was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x. Well-aligned in-plane ferromagnetic order was observed by magnetization measurements. Magnetotransport measurements revealed the occurrence of anomalous Hall effect in the (Ga,Mn)As layer.

ZnO doping and propertiesMagnetic semiconductorFerromagnetismMolecular beam epitaxyLattice constantMaterials scienceCondensed matter physicsMagnetizationHall effectDiffractionGallium arsenide

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