article Open AccessTop 1% cited
Epitaxial growth of a silicene sheet
Applied Physics Letters · 2010 · Vol. 97(22)
B. Lalmi✉(Centre National de la Recherche Scientifique)Hamid Oughaddou(Institut Rayonnement-Matière de Saclay)Hanna Enriquez(Commissariat à l'Énergie Atomique et aux Énergies Alternatives)Abdelkader Kara(University of Central Florida)S. Vizzini(Aix-Marseille Université)Bénidicte Ealet(Centre National de la Recherche Scientifique)B. Aufray(Centre National de la Recherche Scientifique)
Abstract
Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphenelike structure) epitaxially grown on a close-packed silver surface [Ag(111)]. This has been achieved via direct condensation of a silicon atomic flux onto the single-crystal substrate in ultrahigh vacuum conditions. A highly ordered silicon structure, arranged within a honeycomb lattice, is synthesized and present two silicon sublattices occupying positions at different heights (0.02 nm) indicating possible sp2-sp3 hybridizations.
Graphene research and applicationsTopological Materials and PhenomenaCarbon Nanotubes in CompositesSiliceneSiliconScanning tunneling microscopeEpitaxyMaterials scienceSubstrate (aquarium)GermaneneCrystallographyLattice (music)Crystal structure
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References
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