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Tuning the Band Gap in Hybrid Tin Iodide Perovskite Semiconductors Using Structural Templating

Inorganic Chemistry · 2005 · Vol. 44(13) · pp. 4699–4705
J. KnutsonJames D. MartinDavid B. Mitzi

Abstract

Structural distortions within the extensive family of organic/inorganic hybrid tin iodide perovskite semiconductors are correlated with their experimental exciton energies and calculated band gaps. The extent of the in- and out-of-plane angular distortion of the SnI4(2-) perovskite sheets is largely determined by the relative charge density and steric requirements of the organic cations. Variation of the in-plane Sn-I-Sn bond angle was demonstrated to have the greatest impact on the tuning of the band gap, and the equatorial Sn-I bond distances have a significant secondary influence. Extended Hückel tight-binding band calculations are employed to decipher the crystal orbital origins of the structural effects that fine-tune the band structure. The calculations suggest that it may be possible to tune the band gap by as much as 1 eV using the templating influence of the organic cation.

Perovskite Materials and ApplicationsChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And PropertiesChemistryBand gapPerovskite (structure)SemiconductorIodideExcitonTinElectronic band structureSteric effectsCrystal (programming language)
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