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Chemical doping of graphene

Journal of Materials Chemistry · 2010 · Vol. 21(10) · pp. 3335–3345
Hongtao LiuYunqi LiuDaoben Zhu

Abstract

Recently, a lot of effort has been focused on improving the performance and exploring the electric properties of graphene. This article presents a summary of chemical doping of graphene aimed at tuning the electronic properties of graphene. p-Type and n-type doping of graphene achieved through surface transfer doping or substitutional doping and their applications based on doping are reviewed. Chemical doping for band gap tuning in graphene is also presented. It will be beneficial to designing high performance electronic devices based on chemically doped graphene.

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References
Energy Gaps in Graphene Nanoribbons
Physical Review Letters · 2006 · 4,996 citations
Insulator to Semimetal Transition in Graphene Oxide
The Journal of Physical Chemistry C · 2009 · 643 citations
Ultrahigh electron mobility in suspended graphene
Solid State Communications · 2008 · 7,908 citations
Quasiparticle dynamics in graphene
Nature Physics · 2006 · 1,141 citations
The rise of graphene
Nature Materials · 2007 · 39,026 citations
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